| 衬底温度和生长速率对In0.2Ga0.8As分子束外延薄膜生长影响 |
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| 引用本文： | 白晨皓,杨瑞霞,张强,贾月辉. 衬底温度和生长速率对In0.2Ga0.8As分子束外延薄膜生长影响[J]. 唐山师范学院学报, 2009, 31(5): 45-46 |
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| 作者姓名： | 白晨皓 杨瑞霞 张强 贾月辉 |
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| 作者单位： | 河北工业大学,信息学院,天津,300130 |
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| 摘 要： | 采用分子束外廷生长技术，在GaAs衬底上制备InGaAs外廷材料。实验结果表明，衬底温度直接决定了InGaAs材料制备过程中In原子在界面间的渗析和In原子在外延层表面迁移，影响了IhGaAs外延材料的生长模式；生长速率影响着InGaAs外延层的质量。实验结果表明，通过调整衬底温度和生长速率，在衬底温度为500℃，生长速率为1200nm／h时，制备出的样品结晶质量和表面形貌最好。
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| 关 键 词： | 分子束外延 衬底温度 生长速率 |
Effects of Substrate Temperature and Growth Rate on Molecular Beam Epitaxial Growth of In0.2Ga0.8As |
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| BAI Chen-hao,YANG Rui-xia,ZHANG Qiang,JIA Yue-hui. Effects of Substrate Temperature and Growth Rate on Molecular Beam Epitaxial Growth of In0.2Ga0.8As[J]. Journal of Tangshan Teachers College, 2009, 31(5): 45-46 |
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| Authors: | BAI Chen-hao YANG Rui-xia ZHANG Qiang JIA Yue-hui |
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| Affiliation: | (Department of Information Project, Hebei University of Technology, Tianjin 300130, China) |
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| Abstract: | The effects of the growth rate and substrate temperature on InxGal-xAs material grown by molecular beam epitaxial on GaAs substrate were investigated. A conclusion is drawn that the substrate temperature influences the level of In segregation and determines the forming model of InGaAs material; while the growth rate influences the quality of InGaAs epilayer material. It was found that the InGaAs epilayer material grown at 500℃ and 1200nm/h had higher quantity. |
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| Keywords: | MBE substrate temeperature growth rate |
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