Effects of ultrasonic bonding parameters on reliability of flip chip GaN-based light emitting diode |
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Authors: | YANG Lian-qiao YUAN Fang ZHANG Jian-hua |
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Institution: | 1. Key Laboratory of Advanced Display and System Application(Shanghai University), Ministry of Education, Shanghai 200072, P. R. China 2. School of Mechatronics Engineering and Automation, Shanghai University, Shanghai 200072, P. R. China 3. Key Laboratory of Advanced Display and System Application(Shanghai University), Ministry of Education, Shanghai 200072, P. R. China ;School of Mechatronics Engineering and Automation, Shanghai University, Shanghai 200072, P. R. China |
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Abstract: | This work applied the ultrasonic bonding to package flip chip GaN-based light emitting diodes (flip chip LEDs) on Si substrates.
The effects of ultrasonic bonding parameters on the reliability of flip chip GaN-based LED were investigated. In the sequent
aging tests, samples were driven with a constant current of 80 mA for hundreds hours at the room temperature. It was found
that the electroluminescence (EL) intensity variation had a large correlation to the ultrasonic power, and then to the bonding
temperature and force. A high bonding temperature and ultrasonic power and a proper bonding force improved the EL intensity
significantly. It was contributed to a strong atom inter-diffusion forming a stable joint at the bonding interface. The temperature
fluctuation in the aging test was the main factor to generate a high inner stress forming delamination at the interface between
the chip and Au bump. As a result, delamination had retarded the photons to emit out of the LED packaging and decay its EL
intensity. |
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Keywords: | light emitting diode (LED) flip chip LED electroluminescence (EL) intensity ultrasonic bonding delamination |
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