| 关于掺杂半导体光吸收的研究 |
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| 引用本文： | 陈水妹,单淑萍,邱学云.关于掺杂半导体光吸收的研究[J].科教文汇,2011(9):71-72. |
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| 作者姓名： | 陈水妹 单淑萍 邱学云 |
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| 作者单位： | 1. 龙岩学院物理与机电工程学院,福建·龙岩,364012
2. 文山学院数理系,云南·文山,663000 |
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| 摘 要： | 掺杂半导体光吸收是半导体材料应用于电子和光电器件的基础。当光场作用在n型掺杂半导体材料砷化镓时,结果表明不同掺杂浓度下光生电子浓度随着弛豫时间的变化而变化,光生电子浓度随着光吸收系数的增加而增加。
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| 关 键 词： | 砷化镓 光生电子 光吸收系数 |
The Study of Optical Absorption in a Doping Semiconductor |
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| Authors: | Chen Shuimei Shan Shuping Qiu Xueyun |
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| Institution: | [2] Longyan University,364012,Longyan,Fujian,China |
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| Abstract: | The study of the optical absorption in a semiconductor such as N-type doping GaAs excited optically is of fundamental importance both for its applications in electronic and optoelectronic devices.It is shown from the study that the electron relaxation time exhibits a relatively strong temperature dependence and the optical carrier density decreases with increasing optical absorption in a polar semiconductor like GaAs excited optically. |
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| Keywords: | GaAs optical carrier optical absorption |
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