自旋极化电子源装置研究

自旋极化电子在许多研究领域有着广泛用途，目前国际上普遍采用光电离GaAs晶体产生自旋极化电子。本文介绍自旋极化电子产生的原理及一种设计简洁、结构简单的极化电子源装置。该十字型四通道装置内有一非常简单的900静电偏转器，新型的用于固定晶片的弹簧夹子可保证晶片加热均匀。用波长780nm圆偏振激光激活GaAs光电阴极可以产生极化电子，然后通过900静电偏转器及一组静电透镜将极化电子引、到反应区。

a Simplified GaAs Polarized Electron Source

The use of polarized electrons has become widespread in many areas of research .To produce polarized electrons , a method based on photoemission from GaAs crystal is used. The principle of GaAs photoemission polarized electrons and a very simple kind of GaAs polarized electron source are introduced in this paper. The source chamber is conflated four-way cross , a very simple tubular 900 electrostatic deflector and a new spring-clamp GaAs crystal mounting design to provide uniform crystal heating . The GaAs photocathode must be activated by a weavelength 780nm circle polarized laser to produce a transversely polarized electron beam which are transferred to the target point through a group of electrostatic lenses.