| Si基薄膜的X射线衍射表征研究 |
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| 引用本文： | 郝正同,杨子义.Si基薄膜的X射线衍射表征研究[J].绵阳师范学院学报,2010,29(11). |
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| 作者姓名： | 郝正同 杨子义 |
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| 作者单位： | 绵阳师范学院物理与电子工程学院;贵阳学院物电系; |
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| 基金项目： | 绵阳师范学院科研基金，贵阳市科技计划项目，贵州省科学技术基金 |
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| 摘 要： | 简述了X射线衍射(X-Ray Diffraction,XRD)的基本原理,计算了硅晶体的消光特性,从理论上研究了Si基薄膜XRD表征的特征.研究结果表明:由于薄膜的择优生长,Si基薄膜XRD谱与粉晶XRD谱存在差异;并可能观测到Si基片的二级衍射峰.研究结果在实际应用中对分析硅基薄膜的晶体结构具有重要意义.
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| 关 键 词： | 薄膜 X射线衍射 消光特性 择优生长 |
A Study of X-Ray Diffraction Characterization for Si-based Films |
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| HAO Zheng-tong,YANG Zi-yi.A Study of X-Ray Diffraction Characterization for Si-based Films[J].Journal of Mianyang Normal University,2010,29(11). |
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| Authors: | HAO Zheng-tong YANG Zi-yi |
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| Institution: | HAO Zheng-tong1,YANG Zi-yi2(1 School of Physics and Electronic Engineering,Mianyang Normal University,Mianyang,Sichuan,621000)(2 Department of Physics and Electronics,Guiyang University,Guiyang,GuiZhou,550025) |
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| Abstract: | The basic theory of the XRD is presented;the extinction properties of silicon crystal are discussed;then the XRD characterization of Si-based films is studied.The result shows that the XRD pattern of Si-based film is different from that of the powder due to the preferential growth.It also shows that the second-order diffraction peaks of Si substrates could be measured by /2 scan.It is of great significance in analyzing the crystal structure of Si-based film in application. |
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| Keywords: | film XRD extinction property preferential growth |
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