| 三极管导通工作状态的近似估算 |
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| 引用本文： | 袁志成. 三极管导通工作状态的近似估算[J]. 河北北方学院学报(社会科学版), 2000, 16(1): 91-93 |
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| 作者姓名： | 袁志成 |
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| 作者单位： | 张家口师范专科学校物理系,张家口,075028 |
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| 摘 要： | 文中剖析了现行部分电子技术教材中判断三极管导通工作状态的两种方法的弊端,提出对饱和区进行区域划分,明确用VCEO表示临界饱和时的饱和电压VCE,改进了原有的近似估算法,使其适用于分析饱和状态饱和程度且更易于初学者理解.
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| 关 键 词： | 饱和 临界饱和 浅度饱和 |
| 文章编号： | 1008-2727(2000)01-0091-(03) |
| 修稿时间： | 1999-12-06 |
Approximate Assessments of the Working State of Transistor Passage |
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| Yuan Zhicheng. Approximate Assessments of the Working State of Transistor Passage[J]. Journal of Hebei North University, 2000, 16(1): 91-93 |
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| Authors: | Yuan Zhicheng |
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| Abstract: | This article analyses the malpractices of the two methods used in some textbooks on electronic techniques to judge the working state of transistor passage.lt suggests the idea of division of the satisfaction areas; it clarifies the usage of VCEO to represent VCB, when critical satisfaction is reached; it also improves the former approximate assessments in order to be more fit to analyse the shallow state of satisfaction and to be more understandable to beginners. |
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| Keywords: | satisfaction critical statisfaction shallow satisfaction |
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