| Cd掺杂ZnO阵列纳米梳子 |
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| 引用本文： | 周少敏.Cd掺杂ZnO阵列纳米梳子[J].湖南科技学院学报,2004,25(6):53-57. |
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| 作者姓名： | 周少敏 |
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| 基金项目： | 中国科学院资助项目，中国科学院联合实验室基金，中国博士后科学基金 |
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| 摘 要： | 作者采用Zn+Cd粉,制得了大量阵列Cd掺杂ZnO纳米梳子.这些纳米梳子通过X-射线衍射仪(XRD)、X-射线光电子能谱仪(XPS)、透射电子显微镜(TEM)、X-射线能量损失谱仪(EDS)、选区电子衍射仪(SAED)及高分辨透射电子显微镜(HRTEM)来分析其形貌和宏、微观结构.结果显示这些纳米梳子的臂直径为15-50
nm、臂长为400nm,它们都有单晶的结构及相应的生长机制为传统的气固生长机制.
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| 关 键 词： | Ⅱ-Ⅵ族半导体 Cd掺杂 纳米结构 ZnO阵列 |
Cd-doped ZnO Nanocantilever Arrays |
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| Shao-Min Zhou.Cd-doped ZnO Nanocantilever Arrays[J].Journal of Hunan University of Science and Engineering,2004,25(6):53-57. |
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| Authors: | Shao-Min Zhou |
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| Abstract: | I demonstrate bulk synthesis of highly crystalline Cd-doped ZnO nanocantilever arrays (CZNAs) using Cd and Zn powders, which is characterized via powder X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), transmission electron microscopy (TEM), energy dispersive x-ray spectroscopy (EDS), selected area electron diffraction (SAED), high resolution TEM (HRTEM). The results show that the as-prepared CZNAs have diameters of about 15-50 nm, and lengths up to 400 nm with single crystal phase where the corresponding process of growth is suggested for conventional vapor solid (VS) mechanism. |
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| Keywords: | Ⅱ-Ⅵ semiconductor Cd-doped Nanostructure ZnO arrays |
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