| LiF：Mg，Cu低温热释光性质研究 |
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| 引用本文： | 高慧. LiF：Mg，Cu低温热释光性质研究[J]. 山东教育学院学报, 2008, 23(3): 87-88 |
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| 作者姓名： | 高慧 |
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| 作者单位： | 山东省教育学院物理系,山东,济南,250013 |
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| 摘 要： | 本文选用不同辐照强度的LiF：Mg，Cu热释光剂量计。发现LiF：Mg，Cu样品的主峰温度125K和138K均与纯LiF中的本征缺陷H心和Vk心的热衰退温度接近，因此把样品中热释光主峰分别解释为两组受杂质微扰的F—H型和Vk—e型的复合而成的。
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| 关 键 词： | 掺Cu Mg LiF 本征缺陷 热释光 辐射剂量 |
Low Temperature Thermoluminescence of LiF:Mg,Cu |
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| Gao hui. Low Temperature Thermoluminescence of LiF:Mg,Cu[J]. Journal of Shandong Education Institute, 2008, 23(3): 87-88 |
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| Authors: | Gao hui |
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| Affiliation: | Gao hui (Department of Physics,Sh,ong Institute of Education,Jinan 250013,China) |
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| Abstract: | Thermoluminescence characteristics have been studied on different doped LiF:Mg,Cu.The temperatures of main peaks in these samples are closed to those of F-H and Vk-e recombinations in pure LiF.Thus we suggest that both 125K and 138K emissions are in fact two groups of emission bands based on the impurity disturbed F-H and Vk-e recombinations. |
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| Keywords: | Cu Mg doped LiF Intrinsic defects thermoluminescence radiate dosage |
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