Dependence of electrical and optical properties of IGZO films on oxygen flow

Amorphous InGaZnO (a-IGZO) films were deposited on the corning eagle XG (EXG) glass substrates using magnetron sputtering method. The structure, surface morphology, electrical and optical properties of these films were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM), semiconductor parameter analyzer and spectrophotometry, respectively. The influence of oxygen flow on the electrical properties of IGZO thin films was studied, showing that increasing oxygen flow changes the resistivity with six orders of magnitude. The contact resistance of ITO/IGZO is 7.35×10⁻² Ω·cm², which suggests that a good ohmic contact exists between In₂O₃: Sn (ITO) and IGZO film.     

Characteristics of bottom gate a-Si TFT array for AM-OLEDs

The authors have fabricated bottom gate amorphous silicon thin film transistor (a-Si TFT) array using five-step lithography process.The device shows a field effect mobility of 0.43 cm 2 /(V·s),on/off ratio of 7.5×10 6 and threshold voltage of 0.87 V.The instability of a-Si TFT is ascribed to the defect state in the a-Si channel and SiNx/a-Si interface.The present a-Si TFT array with SiN x insulator could be a significant step towards the commercialization of active matrix organic lighting diode (AM-OLED) te...     

Effect of annealing on wet etch of amorphous IGZO thin film

Amorphous InGaZnO (a-IGZO) film is deposited on the glass substrate by radio-frequency sputtering and the influence of annealing on wet etch of a-IGZO films were investigated. The results show that etch rate of IGZO films decrease with the increase of annealing temperature. Etching taper angle is less than 60° and critical dimension (CD) loss is less than 1 μm in over-etching time of 30 s. The fact implies that IGZO films etching with oxalic acid may be a good wet etching way for the thin-film transistor (TFT) array process.     

Effect of annealing on wet etch of amorphous IGZO thin film

Amorphous InGaZnO (a-IGZO) film is deposited on the glass substrate by radio-frequency sputtering and the influence of annealing on wet etch of a-IGZO films were investigated.The results show that etch rate of IGZO films decrease with the increase of annealing temperature.Etching taper angle is less than 60 and critical dimension (CD) loss is less than 1 μm in over-etching time of 30 s.The fact implies that IGZO films etching with oxalic acid may be a good wet etching way for the thin-film transistor (TFT) ...