| 一维GaN纳米结构的制备、表征及其特性研究 |
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| 引用本文： | 薛守斌,张兴,庄惠照,薛成山.一维GaN纳米结构的制备、表征及其特性研究[J].德州学院学报,2008,24(4):36-40. |
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| 作者姓名： | 薛守斌 张兴 庄惠照 薛成山 |
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| 作者单位： | 1. 北京大学信息科学技术学院,北京,100871
2. 山东师范大学物理与电子科学学院,济南,250014 |
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| 基金项目： | 国家重点基础研究发展计划(973计划)，国家自然科学基金 |
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| 摘 要： | 采用在石英炉中，氨化Ga2O3薄膜的方法，在Si（111）衬底上成功了制备GaN纳米结构薄膜：纳米线、纳米棒．分别用X射线衍射仪（XRD，Rigaku D／Max--rB Cu Ka）、傅立叶红外透射谱（FTIR，TENSOR27）、扫描电子显微镜（SEM，Hitachi S-570）、高分辨电镜（HRTEM，Philips TECNAIF30）和光致发光谱对样品的结构、成分、形貌和光学特性进行了测量分析．最后，简要的讨论了其生长机制．
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| 关 键 词： | 一维GaN纳米结构 ZnO缓冲层 磁控溅射 |
Synthesis and Characterization of One-dimensional GaN Nanostructures and Study on Their Properties |
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| XUE Shou-bin,ZHANG Xing,ZHUANG Hui-zhao,XUE Cheng-shan.Synthesis and Characterization of One-dimensional GaN Nanostructures and Study on Their Properties[J].Journal of Dezhou University,2008,24(4):36-40. |
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| Authors: | XUE Shou-bin ZHANG Xing ZHUANG Hui-zhao XUE Cheng-shan |
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| Institution: | XUE Shou-bin 1,ZHANG Xing1,ZHUANG Hui-zhao2,XUE Cheng-shan2(1.School of Electronics Engineer , Computer Science,Peking University,Beijing 100871,China,2.Department of Physics , Electronics,Sh,ong Normal University,Jinan 250014,China) |
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| Abstract: | One-Dimensional GaN nanostructures（nanorods, nanowires）have been successfully synthesized on Si substrates by magnetron sputtering through ammoniating the Ga2O3/ZnO films in a quartz tube. The GaN nanostructures are characterized by x-ray diffraction （XRD）, scanning electron microscopy （SEM）, fourier transform infrared （FTIR） system; field-emission transmission electron microscope （FETEM）, and fluorescence spectrophotometer to examine the structure, surface morphology, composition and photoluminescence properties of the GaN nanostructures. Finally, the growth mechanism is also briefly discussed. |
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| Keywords: | one-dimensional GaN nanostructures ZnO buffer layers magnetron sputtering system |
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