HfOxNy薄膜的制备及其性能研究

本文采用磁控溅射法制备了HfOxNy高介电薄膜，结合XRD、XPS等手段研究了退火温度对薄膜的结构和化学键态的影响，发现N的掺入使Hf4f峰位向低能方向移动．而随着退火温度的升高，Hf4f的双峰峰位向着高结合能的方向移动，这表明N的含量随着退火温度的升高而降低．XRD结果显示N的掺人能提高薄膜的晶化温度．

The Preparation and Characterizations of HfOxNy Films

HfOxNy films were prepared by rf - magnetron sputtering in this paper, XPS and XRD were used to investigate the effect of post - deposition annealing on chemical states and structures of HfOxNy films. It was found that the incorporation of nitrogen induced Hf 4f peaks shifted to lower binding energy. However, the Hf 4f peaks was observed to shift toward the higher energy upon higher temperature annealing, which indicates that the content of nitrogen decreases with increasing annealing temperatures. XRD results demonstrate that doping of nitrogen improves the crystallization temperature of HfO2 films.