Mo-Fe催化剂中Mo含量对SWCNTs的制备影响

以“柠檬酸法”制备的Mo-Fe-MgO为催化刑，在850℃下，以Ar为载气，CH4为碳源，制备生成单壁碳纳米管．重点研究了催化剂中Mo的含量对单壁碳纳米管制备质量的影响．实验结果显示，Ar载气中，提高Mo-Fe-MgO催化刑中的Mo载量可以提高碳产率，但同时也造成产物中单壁碳纳米管含量的大幅下降．依据碳产率以及产物中单壁碳纳米管含量的变化，给出了Mo-Fe催化刑的最佳组分比例．     

单步微波多元醇法合成Pt／DCNT异质结构

为了获得高负载、单分散的Pt／DCNTs异质结构,提出一种单步微波加热多元醇的方法．分别利用透射电子显微镜（TEM）和X射线衍射仪（XRD）表征了Pt／DCNT异质结构的形貌及成分．同时样品的拉曼光谱和傅里叶变换红外光谱（FTIR）表明：在微波处理下的双壁碳纳米管表面上有大量的缺陷或功能团产生,而它们的产生是Pt纳米粒子沿着双壁碳纳米管骨架成核与生长的关键因素．     

微电子世界中的碳纳米管

碳纳米管是由类似石墨结构的六边形网格卷绕而成的中空的"微管",它们具有奇特的电学、力学和光学性能,但是碳纳米管最主要的应用可能是制造更快、更有效、寿命更长的电子器件。 　　十年前,日本 NEC基础研究室的范岛纯生在用电弧法制备 C60时,用电子显微镜首次观察到产物中有一种奇特的纳米量级的线状物,它由纯碳组成,有着晶体的规整性和对称性,这个纤细而硕长的大分子就是现在众所周知的碳纳米管。自其发现之日起,碳纳米管就一直是科学界研究的热点问题。 　　最近,碳纳米管又得到工程技术界的关注。碳纳米管的许多特异性能,如…     

磁场作用下制备CNTs／Fe3O4修饰电极及电催化测定多巴胺

本文应用了一种方便有效的方法制备了碳米管四氧化三铁复合物(CNTs/Fe3O4)修饰电极,并在修饰电极干燥过程中应用了磁场.这种在磁场作用下制备的修饰电极对多巴胺(DA)表现出很强的电催化活性.采用了X射线衍射(XRD)、透射电子显微镜(TEM)对制备出来的碳纳米管四氧化三铁复合物的组成、形貌和结构进行了表征.扫描电子显微镜(SEM)对修饰电极的表面形貌进行了表征,循环伏安法(CV)和示差脉冲伏安法(DPV)对修饰电极的电化学性能进行了表征.实验表明,该电极对多巴胺的电化学氧化具有明显的催化作用.用DPV对多巴胺进行了测定,其氧化峰电流与多巴胺的浓度在6.0×10-7-4.3×10-4 mol·L-1范围内呈良好的线性关系,线性相关系数为0.9989,检出限(S/N=3)为3.2× 10-8 mol·L-1.     

射频磁控溅射法制备纳米TiO2薄膜的拉曼光谱分析

采用射频磁控溅射法制备纳米TiO2薄膜，并应用显微拉曼光谱和电子显微镜对薄膜进行微区光分析．通过拉曼光谱研究，一方面有力地揭示出TiO2薄膜的晶体结构，另一方面对薄膜的生长方式提供了线索．薄膜聚集点和平常点上有统一的相结构，电子显微镜观察结果显示薄膜致密均匀．     

气体流量对碳纳米管制备的影响

采用等离子体增强化学气相沉积技术,以C2H2、H2和N2为反应气体,制备出碳纳米管薄膜．利用扫描电镜和拉曼光谱仪对其进行表征．结果表明：气体流量大小对碳纳米管薄膜的生长起着重要作用,获得定向性良好、分布均匀、密度适中的碳纳米管的合适比例是C2H2：H2：N2=30：30：10（seem）．     

反应条件对碳纳米管产率的影响

用镍铝催化剂催化裂解甲烷制备了碳纳米管;研究了反应温度及反应气氛对制备碳纳米管产率的影响。结果表明,碳纳米管的产率随温度的增加先增加,后减小,在550～650℃出现最大值,说明此温度范围最适合碳纳米管的生长;氢气预还原可以提高催化剂的反应活性。反应过程通氢气不但能提高催化剂的活性,同时也能提高产物的质量．上述两种情况均能提高碳纳米管的产率。     

MnO2/碳纳米管/石墨烯/泡沫镍复合材料制备及储锂性能评价综合实验设计

针对锂离子电池负极材料的实际应用问题,设计了MnO2/碳纳米管/石墨烯/泡沫镍复合材料的制备及储锂性能评价综合实验.实验先采用化学气相沉积法制备碳基底,再经水热反应沉积二氧化锰制备自组装电极;通过X射线衍射、扫描电镜、氮吸脱附法等技术和电化学手段对其结构、微观形貌、储锂性能进行表征和评价.该实验涉及纳米材料制备、微观结...     

富勒烯与碳纳米管

介绍了富勒烯及碳纳米管两类纳米材料的制备，结构，特性及应用前景。     

碳纳米管/聚合物复合材料的制备研究

介绍了碳纳米管的结构和特性,着重对碳纳米管/聚合物纳米复合材料的制备方法、研究新动向以及该研究领域所面临的一些问题进行了综述。     

催化剂种类对PECVD制备碳纳米管的影响

采用PEVCD技术,分别用Fe、Ni、Co作为催化剂,在Si基底上沉积出了不同形貌的碳纳米管．并用扫描电镜对碳纳米管的形貌进行了表征．而且深入研究了不同催化剂种类对碳纳米管生长的影响机理．结果表明：Ni是这3种催化剂中最适合沉积碳纳米管的催化剂．     

短碳纳米管的制备

本文利用活性碳、氧化硅和二茂铁的混合物通过气相高温的方法在石英衬底上制备了直径在30～100mm、长约为1μm的短碳纳米管,并通过扫描电镜、投射电镜、电子衍射以及EDS对碳纳米管的形貌及成分进行分析。并对短碳纳米管的形成作了讨论．     

Study on Regeneration of Powdered Activated Carbon by Electron Beam

1 IntroductionActivated carbon is very useful for removal ofpollutants in wastewater and raw drinking water for itslarge adsorbing power. After a cedain time of use, theabsorbing power of activated carbon decreased so that theused activated carbon must be regenerated for economicalreuse.There are many methods for activated carbonregeneration, such as medicamellt method['], oxidizingm.thodl'] and heating method .iC[3]. For reversibleadsorption of organic pollutants with high concenthaonand low…     

电子束再生粉状活性炭的研究

The powdered activated carbon which had adsorbed phenylglycine solution from pharmaceutics factory can be regenerated by mean of irradiation of high-energy electron beams in oxygen, nitrogen and water vapor respectively. The effects of radiation dose and beam current on regeneration of activated carbon in different atmosphere were studied. Differential scanning calorimetry (DSC) and the iodine number of activated carbon were used to monitor the change of carbon adsorption. The results show that the powder activated carbon polluted with phenlglycine could be regenerated effectively by irradiation of high energy electron beams in nitrogen stream. The generation did not need high temperature, and the weight loss of carbon and energy consumption were minimum.     

Silicon carbide nanotubes with special morphology prepared by super critical hvdrothermal method and photoluminescence character

Silicon carbide nanotubes (SiCNTs) with special morphology synthesized by supercritical hydrothermal method at 470 ℃ and 8 MPa have been reported in this paper.SiCNTs with special morphology were characterized by transmission electron microscopy (TEM) and high-resolution TEM (HRTEM).There are two kinds of silicon carbide with special morphology:One is oval SiCNTs with small aspect ratio,the other is bamboo cone-shape structure.SiCNTs have been analyzed by fluorescence spectrometer.The results indicate that the SiCNTs have strong photoluminescence (PL) property.The SiCNTs with oval shape are one kind of intermediate state of growth process of nanotube.The growth mechanism of silicon nanotubes has been proposed based on experiment data.The investigations of growth mechanism of SiCNTs with bamboo structure show that the defect produced in the growth process play the important role in SiCNTs with special structure.     

Silicon carbide nanotubes with special morphology prepared by super critical hydrothermal method and photoluminescence character

Silicon carbide nanotubes (SiCNTs) with special morphology synthesized by supercritical hydrothermal method at 470 °C and 8 MPa have been reported in this paper. SiCNTs with special morphology were characterized by transmission electron microscopy (TEM) and high-resolution TEM (HRTEM). There are two kinds of silicon carbide with special morphology: One is oval SiCNTs with small aspect ratio, the other is bamboo cone-shape structure. SiCNTs have been analyzed by fluorescence spectrometer. The results indicate that the SiCNTs have strong photoluminescence (PL) property. The SiCNTs with oval shape are one kind of intermediate state of growth process of nanotube. The growth mechanism of silicon nanotubes has been proposed based on experiment data. The investigations of growth mechanism of SiCNTs with bamboo structure show that the defect produced in the growth process play the important role in SiCNTs with special structure.     

碳纳米管负载单（双）核四硝基铁酞菁的制备和催化性能

制备出了碳纳米管负载单（双）核硝基铁酞菁,采用电化学手段研究了碳纳米管与金属酞菁的最佳配比,最佳热处理温度以及它们催化氧还原反应的动力学特征。结果表明：对于单核硝基铁酞菁而言,其与碳纳米管的最佳比例为2：3,而双核硝基铁酞菁与碳纳米管的最佳比例为1：4：样品的最佳热处理温度为500℃,催化剂催化氧还原反应的电极过程均受表面吸附所控制。     

氯霉素在羧基化单壁碳纳米管修饰电极上的电催化还原

利用扫描电镜（SEM）和交流阻抗谱法（EIS）对以滴涂法制备的羧基化单壁碳纳米管（SWCNTs-COOH）修饰玻碳电极进行纳米膜特性表征,并采用循环伏安法（CV）研究了氯霉素（CAP）在其上的电化学行为.结果表明,SWCNTs-COOH修饰的玻碳电极对CAP的还原有良好的电催化作用,根据实验结果推测为双质子双电子还原过程,CAP在修饰电极上的扩散系数及反应速率常数分别为8.76×10-4cm2/s及1.64×10-3s-1.在实验优化选定的测试条件下,还原峰（-0.602 V）电流与CAP的浓度在1.55×10-7-1.97×10-5mol/L范围内呈良好线性关系,检出限达2.02×10-8mol/L.相对标准偏差（n=10）为2.24%,可用于氯霉素的含量测定.